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| e PTB 20105 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics Performance at 960 MHz, 25 VCC - Output Power = 20 W - Efficiency = 50% Min Gold Metallization Silicon Nitride Passivated Output Power vs. Input Power 25 Output Power (Watts) 20 15 10 201 05 LOT COD E VCC = 25 V 5 0 0 1 2 3 4 ICQ = 0.100 A f = 960 MHz Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 5.0 70 0.4 -40 to +150 2.5 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20105 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5.0 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe C Min 9 50 -- Typ 10 -- -- Max -- -- 30:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA) Z Source Z Load Frequency MHz 925 942 960 R 3.1 3.0 2.9 Z Source jX -1.8 -1.5 -1.2 R 3.1 2.9 2.7 Z Load jX 1.4 1.4 1.4 2 e Typical Performance Output Power vs. Supply Voltage 26 PTB 20105 Gain vs. Frequency 11 (as measured in a broadband circuit) Output Power (Watts) 22 ICQ = 0.100 A f = 960 MHz Pin = 2.2 W Gain (dB) 10 18 9 VCC = 25 V 8 14 ICQ = 0.100 A Pout = 20 W 930 935 940 945 950 955 960 10 17 19 21 23 25 27 7 925 Vcc, Supply Voltage Frequency (MHz) Efficiency vs. Output Power 60 50 Efficiency (%) 40 30 20 10 0 4 8 12 16 20 24 VCC = 25 V ICQ = 0.100 A f = 960 MHz Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20105 Uen Rev. C 09-28-98 3 |
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